Optoelectronic Properties of Palladium Doped Tin (IV) Oxide (Pd: Sn02) Tlfin Films Deposited by Spray Pyrolysis
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Date
2013
Authors
Munji, M. K.
Mwathe, P. M.
Musembi, R. J.
Odari, B.V.
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Abstract
Palladium Doped Tin (lV) Oxide (Pd: Sn02) thin films were deposited by Spray Pyrolysis technique
using an alcoholic precursor solution consisting of Stannic chloride (SnCl~.5H20) and Palladium Chloride
(PdCI?j The effect of increasing palladium concentration 011 optical and electrical properties was
investigated. Sheet resistivity of the thin films was measured using the four point probe method and laid
in the range of 0027- 3.43 Dcm for Pd: SnO:, thin films with Pd content of 0 - 6931% Pd prepared under
optimized conditions. The optical properties were studied ill the UV/V1SiN1R region The Optical Band
gap of the thin films was ill the range of3.73 - 4.11 eV
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1st Young Scientists' MSSEESA Conference on Materials Science and Solar Cell Technology Abstract No 22