Impact of Annealing Thin Films In(OH)xSy Growth By Solution Technique

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dc.contributor.authorMosiori, Cliff Orori
dc.contributor.authorMagare, Robert
dc.contributor.authorMunji, Mathew
dc.date.accessioned2017-12-28T08:25:07Z
dc.date.available2017-12-28T08:25:07Z
dc.date.issued2017
dc.descriptionResearch Articleen_US
dc.description.abstractIndium Hydroxy Sulphide has demonstrated abundance in resources, low prices, nontoxic characteristics, radiation resistance, high temperature resistance, and chemical stability, and therefore it has become an extremely important photoelectric, photovoltaic, and light sensing thin film material. Some treatment on this material include thermal annealing which is a process used for intrinsic stress liberation, structural improving, and surface roughness to control its electro-optical properties. In a qualitative way, annealing modifies surface morphology, intrinsic parameters, and electron mobility with temperature and time. In this work, an explanation on the surface modification of In(OH)xSy thin films when subjected to an annealing process is discussed. Both electrical and optical effects caused by annealing were carried out and characterizations were performed at different annealing temperatures in nitrogen in the temperature range 373–573 K. Using optical measurements data and simulated data, Scout software was employed and the results showed that increasing annealing temperature causes a slight decrease in transmittance with a consequence of modifying the energy band gaps values between 2.79–3.32 eV. It was concluded that annealing influence optical transmittance and resistance of the film make the thin films potential for photovoltaic, and light sensing applications.en_US
dc.identifier.citationTraektoriâ Nauki = Path of Science. 2017. Vol. 3, No 7en_US
dc.identifier.issn2413-9009
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/17990
dc.language.isoenen_US
dc.publisherPublishing Center Dialogen_US
dc.subjectAnnealingen_US
dc.subjectEnergy band gapsen_US
dc.subjectRecrystallizationen_US
dc.subjectOptical effecten_US
dc.subjectPassivationen_US
dc.subjectStoichiometryen_US
dc.titleImpact of Annealing Thin Films In(OH)xSy Growth By Solution Techniqueen_US
dc.typeArticleen_US
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