Optical studies of doped amorphous arsenic triselenide

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dc.contributor.authorWafula, A. B.
dc.contributor.authorDod, T. S.
dc.date.accessioned2015-06-02T12:09:57Z
dc.date.available2015-06-02T12:09:57Z
dc.date.issued2000
dc.descriptionResearch Articleen_US
dc.description.abstractPhotoconductivity of As2Se3:Alx and As2Se3:Cux was investigated using light of visible spectrum of wavelengths A. = 0.67 um & 0.47 urn. Two regimes were observed: regime 1, the high temperature region above maximum photoconductivity where photoconductivity (crph) is less than dark conductivity (crd), and regime 2, the intermediate temperature region below the maximum photoconductivity where crph > crd' Maximum crph for A. =0. 67 urn occurred at Tm= 313 K for all samples while for A. = 0.47 urn, it occurred at Tm= 323 K for pure As2Se3, 303 for As2Se3:Cux and at 318 K for As2Se3:A Ix. Activation energies of crph were lower than those from crd and those of doped samples were lower than those of pure sampleen_US
dc.description.sponsorshipKenyatta Universityen_US
dc.identifier.citationEast African Journal of Science 2(2): 91-96 (2000)en_US
dc.identifier.issn1029-3221
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/12739
dc.language.isoenen_US
dc.publisherFaculty of Science Kenyatta Universityen_US
dc.subjectphotoconductivityen_US
dc.subjectcarrier generationen_US
dc.subjectsemiconductorsen_US
dc.subjectamorphousen_US
dc.subjectdoped seleniumen_US
dc.subjectsteady stateen_US
dc.titleOptical studies of doped amorphous arsenic triselenideen_US
dc.typeArticleen_US
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