Optical studies of doped amorphous arsenic triselenide
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Date
2000
Authors
Wafula, A. B.
Dod, T. S.
Journal Title
Journal ISSN
Volume Title
Publisher
Faculty of Science Kenyatta University
Abstract
Photoconductivity of As2Se3:Alx and As2Se3:Cux was investigated using light of visible spectrum of
wavelengths A. = 0.67 um & 0.47 urn. Two regimes were observed: regime 1, the high temperature
region above maximum photoconductivity where photoconductivity (crph) is less than dark
conductivity (crd), and regime 2, the intermediate temperature region below the maximum
photoconductivity where crph > crd' Maximum crph for A. =0. 67 urn occurred at Tm= 313 K for all
samples while for A. = 0.47 urn, it occurred at Tm= 323 K for pure As2Se3, 303 for As2Se3:Cux and at
318 K for As2Se3:A Ix. Activation energies of crph were lower than those from crd and those of doped
samples were lower than those of pure sample
Description
Research Article
Keywords
photoconductivity, carrier generation, semiconductors, amorphous, doped selenium, steady state
Citation
East African Journal of Science 2(2): 91-96 (2000)