Ohmic and Space-Charge-Limited Conduction in Doped Amorphous Arsenic Triselenide
dc.contributor.author | Wafula, A. B. | |
dc.date.accessioned | 2015-06-11T09:39:36Z | |
dc.date.available | 2015-06-11T09:39:36Z | |
dc.date.issued | 1998 | |
dc.description | Research Article | en_US |
dc.description.abstract | The electrical characteristics of asernic triselenide have been studied. A number of parameters is evaluated on the basis of the theory of space-charge limited conduction and the following values were obtained: hole mobility Il == 2.68 x 1O-l3m2v-'s-1,room temperature hole concentration Po == 7.21xl023m-3, temperature parameter of trapping distribution T, == 790K; total trap concentration Nt == 3.49 x 1025m-3.Both deep and shallow traps were present. The latter extended to a depth of 0.27 ± 0.03 eV while the deep traps were at about the fermi level. | en_US |
dc.description.sponsorship | Kenyatta University | en_US |
dc.identifier.citation | East African Journal of Science 1(1): 39-43 (May 1998) | en_US |
dc.identifier.issn | 1029-3221 | |
dc.identifier.uri | http://ir-library.ku.ac.ke/handle/123456789/12885 | |
dc.language.iso | en | en_US |
dc.publisher | Faculty of Science Kenyatta University | en_US |
dc.subject | Ohmic | en_US |
dc.subject | Space | en_US |
dc.subject | Charge | en_US |
dc.subject | Limited | en_US |
dc.subject | Conduction | en_US |
dc.subject | Semiconductors | en_US |
dc.subject | Amorphous | en_US |
dc.subject | Substances | en_US |
dc.subject | Doped | en_US |
dc.subject | Selenium | en_US |
dc.title | Ohmic and Space-Charge-Limited Conduction in Doped Amorphous Arsenic Triselenide | en_US |
dc.type | Article | en_US |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- Ohmic and space-charge-limited....pdf
- Size:
- 4.16 MB
- Format:
- Adobe Portable Document Format
- Description:
- Full Text Article
License bundle
1 - 1 of 1
No Thumbnail Available
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed upon to submission
- Description: