Ohmic and Space-Charge-Limited Conduction in Doped Amorphous Arsenic Triselenide
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Date
1998
Authors
Wafula, A. B.
Journal Title
Journal ISSN
Volume Title
Publisher
Faculty of Science Kenyatta University
Abstract
The electrical characteristics of asernic triselenide have been studied. A number of parameters is
evaluated on the basis of the theory of space-charge limited conduction and the following values
were obtained: hole mobility Il == 2.68 x 1O-l3m2v-'s-1,room temperature hole concentration Po ==
7.21xl023m-3, temperature parameter of trapping distribution T, == 790K; total trap concentration
Nt == 3.49 x 1025m-3.Both deep and shallow traps were present. The latter extended to a depth of
0.27 ± 0.03 eV while the deep traps were at about the fermi level.
Description
Research Article
Keywords
Ohmic, Space, Charge, Limited, Conduction, Semiconductors, Amorphous, Substances, Doped, Selenium
Citation
East African Journal of Science 1(1): 39-43 (May 1998)