Current-voltage characteristics of p-CuO/n-ZnO:Sn Solar cell
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Date
2013
Authors
Omayio, E. O.
Karimi, P. M.
Njoroge, W. K.
Mugwanga, F. K.
Journal Title
Journal ISSN
Volume Title
Publisher
Natural sciences publishing corporation
Abstract
Abstract: A p-CuO/n-ZnO:Sn heterojunction solar cell has been fabricated on glass substrate in steps using Edwards
AUTO 306 vacuum coater system. Copper oxide has energy band gap of the range 1.21-2.1 eV while tin doped zinc
oxide (TZO) has good transmittance properties. A solar cell with thickness of 250nm of p-type copper oxide and
thickness of 140nm of n-type TZO with 2% tin doping has been made. Current-Voltage (I-V) measurement has been
done on the solar cell using Keithley 2400 sourcemeter interfaced with the computer running labview program. Diode
properties determined from I-V measurements are open circuit voltage (Voc), short circuit current (Isc), fill factor
(FF), maximum current output (Im), maximum voltage output (Vm), and conversion efficiency (η). The solar cell had
Voc of 480 mV, Isc of 326.8mA, FF=0.63 and η 0.232 %
Description
Research Article
Keywords
Fill factor (FF), I-V graph, tin-doped zinc oxide (TZO), copper indium gallium selenide (CIGS), open circuit voltage (Voc), short circuit current (Isc), conversion efficiency (η)
Citation
Int. J. Thin Film Sci. Tec. 2 No. 1, 25-28 (2013)