Current-voltage characteristics of p-CuO/n-ZnO:Sn Solar cell
| dc.contributor.author | Omayio, E. O. | |
| dc.contributor.author | Karimi, P. M. | |
| dc.contributor.author | Njoroge, W. K. | |
| dc.contributor.author | Mugwanga, F. K. | |
| dc.date.accessioned | 2016-12-22T10:14:42Z | |
| dc.date.available | 2016-12-22T10:14:42Z | |
| dc.date.issued | 2013 | |
| dc.description | Research Article | en_US |
| dc.description.abstract | Abstract: A p-CuO/n-ZnO:Sn heterojunction solar cell has been fabricated on glass substrate in steps using Edwards AUTO 306 vacuum coater system. Copper oxide has energy band gap of the range 1.21-2.1 eV while tin doped zinc oxide (TZO) has good transmittance properties. A solar cell with thickness of 250nm of p-type copper oxide and thickness of 140nm of n-type TZO with 2% tin doping has been made. Current-Voltage (I-V) measurement has been done on the solar cell using Keithley 2400 sourcemeter interfaced with the computer running labview program. Diode properties determined from I-V measurements are open circuit voltage (Voc), short circuit current (Isc), fill factor (FF), maximum current output (Im), maximum voltage output (Vm), and conversion efficiency (η). The solar cell had Voc of 480 mV, Isc of 326.8mA, FF=0.63 and η 0.232 % | en_US |
| dc.identifier.citation | Int. J. Thin Film Sci. Tec. 2 No. 1, 25-28 (2013) | en_US |
| dc.identifier.uri | http://ir-library.ku.ac.ke/handle/123456789/15257 | |
| dc.language.iso | en | en_US |
| dc.publisher | Natural sciences publishing corporation | en_US |
| dc.subject | Fill factor (FF) | en_US |
| dc.subject | I-V graph | en_US |
| dc.subject | tin-doped zinc oxide (TZO) | en_US |
| dc.subject | copper indium gallium selenide (CIGS) | en_US |
| dc.subject | open circuit voltage (Voc) | en_US |
| dc.subject | short circuit current (Isc) | en_US |
| dc.subject | conversion efficiency (η) | en_US |
| dc.title | Current-voltage characteristics of p-CuO/n-ZnO:Sn Solar cell | en_US |
| dc.type | Article | en_US |