Electrical behaviour of Zinc Sulphide (ZnS)thin films grown by chemical bath deposited
dc.contributor.author | Mosiori, Cliff Orori | |
dc.contributor.author | Njoroge, Walter K. | |
dc.contributor.author | Okum, John | |
dc.date.accessioned | 2016-08-02T14:03:11Z | |
dc.date.available | 2016-08-02T14:03:11Z | |
dc.date.issued | 2014-12 | |
dc.description | Research article | en_US |
dc.description.abstract | At room temperature, thin films of Zinc Sulphide were grown on microscope glass slides. Precursor solution from aqueous solutions of Zinc chloride in which ammonia solution as a source of Zn 2+ ; Triethanalomine (TEA) as a complexing agent, and thiourea (TU) as a source S 2- were used. Electrical properties were investigated in relation to their thicknesses as measured as it varied by changing the deposition time. Resistivity and the conductivity of the films were found to be thickness dependent while the results indicate that the films are semiconducting in nature. Keywords: Chemical Bath Method, ZnS, Zinc Sulphide, Resistivity, Conductivity, Binary Thin Films | en_US |
dc.identifier.citation | Rift Valley Journal of Science and Technology, http://www.rvist.ac.ke Vol. 1 No 3, December, 2014 | en_US |
dc.identifier.uri | http://ir-library.ku.ac.ke/handle/123456789/14859 | |
dc.language.iso | en | en_US |
dc.subject | Chemical Bath Method | en_US |
dc.subject | ZnS | en_US |
dc.subject | Zinc Sulphide | en_US |
dc.subject | Resistivity | en_US |
dc.subject | Conductivity | en_US |
dc.subject | Binary Thin Films | en_US |
dc.title | Electrical behaviour of Zinc Sulphide (ZnS)thin films grown by chemical bath deposited | en_US |
dc.type | Article | en_US |
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