Electrical behaviour of Zinc Sulphide (ZnS)thin films grown by chemical bath deposited

dc.contributor.authorMosiori, Cliff Orori
dc.contributor.authorNjoroge, Walter K.
dc.contributor.authorOkum, John
dc.date.accessioned2016-08-02T14:03:11Z
dc.date.available2016-08-02T14:03:11Z
dc.date.issued2014-12
dc.descriptionResearch articleen_US
dc.description.abstractAt room temperature, thin films of Zinc Sulphide were grown on microscope glass slides. Precursor solution from aqueous solutions of Zinc chloride in which ammonia solution as a source of Zn 2+ ; Triethanalomine (TEA) as a complexing agent, and thiourea (TU) as a source S 2- were used. Electrical properties were investigated in relation to their thicknesses as measured as it varied by changing the deposition time. Resistivity and the conductivity of the films were found to be thickness dependent while the results indicate that the films are semiconducting in nature. Keywords: Chemical Bath Method, ZnS, Zinc Sulphide, Resistivity, Conductivity, Binary Thin Filmsen_US
dc.identifier.citationRift Valley Journal of Science and Technology, http://www.rvist.ac.ke Vol. 1 No 3, December, 2014en_US
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/14859
dc.language.isoenen_US
dc.subjectChemical Bath Methoden_US
dc.subjectZnSen_US
dc.subjectZinc Sulphideen_US
dc.subjectResistivityen_US
dc.subjectConductivityen_US
dc.subjectBinary Thin Filmsen_US
dc.titleElectrical behaviour of Zinc Sulphide (ZnS)thin films grown by chemical bath depositeden_US
dc.typeArticleen_US
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