Effect of Sn Doping on the Electrical Properties of as Prepared and annealed ZnO thin films Prepared by Reactive Evaporation

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dc.contributor.authorMunji, M. K.
dc.contributor.authorNyaga, P. K.
dc.contributor.authorMusembi, R. J.
dc.date.accessioned2014-10-21T12:14:26Z
dc.date.available2014-10-21T12:14:26Z
dc.date.issued2014
dc.description.abstractLayers of transparent and conductive Sn-doped Zinc oxide (lnO) have been prepared by reacti. e evaporation on glass substrates. The deposition has been done at various doping levels ranging from J % to 8%. Annealing of samples was done using Rapid Thermal Processing (RTP). In this work, Nabertherrn Programmable Furnace system was used and annealing done at 300°C for one hour. Electrical characterization has been done for both prepared and annealed samples using four point probe configuration at room temperature (25°C) to obtain the sheet resistance. The sheet resistance for tin doped zinc oxide reduced with increase in tin doping to a minimum of J J .920cm at 4% tin doping for as prepared samples and I I .890cl11 for annealed samples.en_US
dc.identifier.citation1st Young Scientists' MSSEESA Conference on Materials Science and Solar Cell Technology Abstract No 10en_US
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/11505
dc.language.isoenen_US
dc.titleEffect of Sn Doping on the Electrical Properties of as Prepared and annealed ZnO thin films Prepared by Reactive Evaporationen_US
dc.typeArticleen_US
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