Effect of deposition temperature on the properties of al doped Sn02 in SnxSey-Sn02:AI P-N solar cell
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Date
2014-10-08
Authors
Muchangi, Philip Mumbere M'buri
Journal Title
Journal ISSN
Volume Title
Publisher
Kenyatta University
Abstract
Non- renewable sources of energy have been used for a long time making the natural resources
such as fuels to become depleted. This has led to the increase in demand for energy to sustain the
fast growing technological world. This has triggered the need for advanced but affordable and
more efficient renewable sources based on solar cell technology to be applied. In respect to this,
transparent conducting oxides and certain metal layers have been applied as front and back
contacts on the solar cells. The optimal optical, electrical performance and structural strength of
such devices is determined by the methods of deposition and the conditions under which the
deposition is carried out. In this research thin films of Aluminium doped tin oxide and tin
selenide at different concentrations will be deposited on a glass substrate by reactive evaporation
and evaporation respectively using Edwards 306 AUTO Evaporation system. Different ratios of
tin to selenium would be used to form tin selenide whose optical and electrical properties would
be studied. The Tin oxide will be deposited at various doping concentrations in the range of 1%
to 10% by mass so as to improve its conductivity. The electrical properties of both tin selenide
and Al doped Tin oxide thin films will be studied using the four point probe set up and readings
obtained by Keithley 2400 source meter. The optical properties in the range of 300nm-1200nm
will be studied using the UV-VIS-NIR spectrophotometer. Results obtained will then be
analysed by scout software to determine the optical constants of the films. The ratio of
Aluminium doped Tin oxide that gives the best results will be deposited at different temperatures
ranging from 400°c-600°c and then electrical and optical characterization of the films will be
carried out. Finally SexSey-Sn02:Sn solar cell will be fabricated at the optimum deposition
temperature using the optimum doping concentration. The performance of the p-n junction such
as short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency
(0) will be studied using a solar cell simulator.