Analysis of Optimuzed Deposition Temperature of ZnO:Al Thin Film on SnSe ZnO:Al P-N Juction Solar Cell

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dc.contributor.authorMunji, M. K.
dc.contributor.authorMbae, J. G.
dc.contributor.authorMusembi, R. J.
dc.date.accessioned2014-10-21T12:00:05Z
dc.date.available2014-10-21T12:00:05Z
dc.date.issued2014
dc.description.abstractSolar energy has revolutionized the energy sector in the entire world by offering affordable, abundant and safe power source to the growing demands. The technology in solar cell production has advanced considerably in recent years Solar cell with very high conversion efficiency has been manufactured The efficiencies of solar cells depend on materials used. Deposition method and deposition conditions as they control the optoelectronic properties of the layers. Solar cell samples pre pared with a coat of ZnO)/AI exhibit 100 little degradation and very good solar cell properties (2hao et 01.,20(2). In this research Zinc Oxide will be doped in various percentages alluminurn ranging from 0% to 6% by mass to increase charge carriers. To obtain the optimum doping concentration, the optical and electrical properties of ZnO: AI thin film samples will be analyzed using a solid spec 3700 DUV optical spectrum analyzer and four point probe method respectively. The thin films of optimized Al doped 2nO will be deposited at different deposition temperature ranging from .4OOK-6OOK and tin selenide by reactive evaporation and evaporation technique respectively using Edward 306.Aulo evaporation system. The absorptance transrnittance and reflectance data of opitim ized ZnOA I in the range from 300nlll-2500nfll Will be obtained using UV-VIS NIR spectrophotometer solid state 3700 DUV. The resulting optical measurements will be analyzed using scout software to determine optical constant for thin solar cells The electrical properties of SnxSey and ZnO Al thin films w ill studied using four points probe method using Keithley 400 source meter using Lab View programme SnxSey-ZnO:AI solar cell will be fabricated using the optimized eloping concentration of AI and deposition temperature The performance of the p-n junction such as short circuit current (l sc). open circuit voltage (Voc ). fill factor (FF) and conversion efficiency (11) will be studied using a solar cell simulatoren_US
dc.identifier.citation1st Young Scientists' MSSEESA Conference on Materials Science and Solar Cell Technology Abstract No 46en_US
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/11504
dc.language.isoenen_US
dc.titleAnalysis of Optimuzed Deposition Temperature of ZnO:Al Thin Film on SnSe ZnO:Al P-N Juction Solar Cellen_US
dc.typeArticleen_US
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