Mechanical stresses upon crystallization in phase change materials

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dc.contributor.authorNjoroge, W. K.
dc.contributor.authorKalb, J.
dc.contributor.authorWamwangi, D.
dc.contributor.authorWuttig, M.
dc.contributor.authorSpaepen, F.
dc.date.accessioned2014-08-28T06:38:31Z
dc.date.available2014-08-28T06:38:31Z
dc.date.issued2001
dc.descriptionhttp://dx.doi.org/10.1063/1.1415419en_US
dc.description.abstractCrystallization processes in different Te alloys, employed in phase change materials for optical data storage, have been investigated by in situ mechanical stress measurements. Upon crystallization a considerable stress buildup is observed, which scales with the volume change upon crystallization. Nevertheless the observed stress change only corresponds to approximately 9% of the stress estimated for a purely elastic transformation. Further evidence of stress relief phenomena comes from the temperature dependence of the stress in the crystalline and amorphous states. Ultrathin dielectric layers have a profound influence on the crystallization process as evidenced by simultaneous optical reflectance and mechanical stress measurements. This observation can be explained by heterogeneous nucleation of crystallites at the interface between the dielectric layer and the phase change film.en_US
dc.identifier.citationApplied Physics Letters 79 , 3597 (2001)en_US
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/11078
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.subjectcrystallisationen_US
dc.subjectoptical storageen_US
dc.subjectsolid-state phase transformationsen_US
dc.subjectstress measurementen_US
dc.subjecttellurium alloysen_US
dc.titleMechanical stresses upon crystallization in phase change materialsen_US
dc.typeArticleen_US
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