Characterization of p-s002: al in-zoo: al p-n Junction defosited by spray pyrolysis Technique for led applications
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Date
2014-07-25
Authors
Onkundi, Paul Nyangaresi
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Abstract
Transparent zinc oxide (ZnO) and tin oxide (Sn02) are of great importance due to their
various applications in opto-electronic devices. Tin oxide (Sn02) shows n-type
conductivity. However when there is a suitable dopant doped with it the carrier
conversion takes place and changes to p-type semiconductor. Aluminium doped
(ZnO:AI) and undoped Zinc oxide (ZnO) shows n-type conductivity. In this study, ptype
transparent conducting oxides of Sn02:AI and n-ZnO:AI thin films will be separately
deposited on glass substrates by spray pyrolysis technique at different deposition
temperatures and doping atomic percentages. Carrier gas pressure and substrate nozzle
distance will also be varied. Optical characterization of the thin films will be done using
optical spectrum analyzer. The data obtained will be used to calculate the transmittance,
reflectance, absorbance, and the bandgap of the material. In electrical characterization IV
characterization of the thin films will also be done to obtain rectifying current -voltage
characteristics and the turn-on voltage. The optimized conditions of p-Sn02:AI and n-
ZnO:AI will be used to prepare p-Sn02:AI /n-ZnO:AI PN junction. The resulting junction
will be optically and electrically characterized for LED application.