Characterization of cuo/zno:ai p-n junction for solar cell application

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dc.contributor.advisorMunji, M. K.
dc.contributor.authorKing' ang'i, James Mwiti
dc.date.accessioned2014-07-31T12:48:41Z
dc.date.available2014-07-31T12:48:41Z
dc.date.issued2014-07-31
dc.description.abstractSolar cells with high efficiency and low price have long been desired. However the commercially available solar cells are still of low efficiencies and expensive. Various elements and compounds are used to fabricate thin film semi-conductors for solar cell application. However insufficient literature and data is available on the use of CuO and ZnO:Al for solar cell application especially by use of spray pyrolysis technique. In this research CuO and ZnO:Al thin films will be prepared by spray pyrolysis. In order to obtain different samples of CuO, deposition temperature will be kept constant first while solution molarity will be varied from O.3M to 0.45M. Each of the samples will be characterized separately in order to obtain the solution molarity which gives the best optical and electrical characteristics. Secondly, the optimised solution molarity will be kept constant and the deposition temperature will be varied from 2500 to 4000 in order to obtain more samples of CuO prepared at different temperatures. Each of the samples will also be characterized separately in order to obtain the sample which gives the best optical and electrical characteristics. To obtain the optimised conditions of ZnO:AI, initially the deposition temperature will be kept constant while doping percentage will be varied from 1% to 10% to obtain different samples of ZnO:AI thin films. Each of the samples will be characterized separately. The optimised doping percentage will be kept constant while deposition temperature will be varied from 2500 to 4000 in order to obtain more samples of ZnO:AI prepared at different temperatures. Each of these samples will be characterized separately in order to obtain the sample which gives the best optical and electrical characteristics. Optical properties of each of the above mentioned samples which include transmittance and reflectance will be measured using optical spectrum analyser and others which include refractive indices, absorption coefficients, dielectric constants and energy band gaps will be calculated using scouts software. Electrical characteristic which is the sheet resistivity will be obtained using four point probe method. The optimised conditions will be used in the fabrication of solar cell. In the fabrication of solar cell CuO will be used as absorber layer while ZnO:AI will be the window layer. After the solar cell has been fabricated, the CuO/ZnO:AI p-n junction will be characterised to obtain its current voltage characteristics using solar cell simulator. A graph of current against voltage will be plotted and from the graph solar cell parameters which includes open circuit voltage (Voe) and short circuit current (Ise) will be determined. Others which include conversion efficiency (11) and Fill factor (FF) shall be determined from measurements of current and voltage generated across the solar cell. The fabrication of CuO/ZnO:AI thin film solar cell is expected to offer reliable solution to design of solar cells with high efficiency from cheap and available resourcesen_US
dc.description.sponsorshipKenyatta Universityen_US
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/10802
dc.language.isoenen_US
dc.titleCharacterization of cuo/zno:ai p-n junction for solar cell applicationen_US
dc.typeThesisen_US
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