Current-voltage characteristics of p-CuO/n-ZnO:Sn Solar cell

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dc.contributor.authorNjoroge, W. K.
dc.contributor.authorOmayio, Enock Osoro
dc.contributor.authorKarimi, P. M.
dc.contributor.authorMugwanga, F. K.
dc.date.accessioned2014-08-26T08:55:51Z
dc.date.available2014-08-26T08:55:51Z
dc.date.issued2013
dc.description.abstractA p-CuO/n-ZnO:Sn heterojunction solar cell has been fabricated on glass substrate in steps using Edwards AUTO 306 vacuum coater system. Copper oxide has energy band gap of the range 1.21-2.1 eV while tin doped zinc oxide (TZO) has good transmittance properties. A solar cell with thickness of 250nm of p-type copper oxide and thickness of 140nm of ntype TZO with 2% tin doping has been made. Current-Voltage (I-V) measurement has been done on the solar cell using Keithley 2400 sourcemeter interfaced with the computer running labview program. Diode properties determined from I-V measurements are open circuit voltage (Voc), short circuit current (Isc), fill factor (FF), maximum current output (Im), maximum voltage output (Vm), and conversion efficiency (η). The solar cell had Voc of 480 mV, Isc of 326.8mA, 0.232 %. 0.63 and η FFen_US
dc.identifier.citationInternational Journal of Thin Films Science and Technology Vol. 2 No. 1 25 - 28 (2013 )en_US
dc.identifier.urihttp://naturalspublishing.com/files/published/54154s5vo12mgn.pdf
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/11049
dc.language.isoenen_US
dc.publisherNatural Sciences Publishing Cor.en_US
dc.subjectFill factor (FF)en_US
dc.subjectI - V graphen_US
dc.subjecttin - doped zinc oxide (TZO)en_US
dc.subjectcopper indium gallium selenide (CIGS)en_US
dc.subjectopen circuit voltage (Voc)en_US
dc.subjectshort circuit current (Isc)en_US
dc.subjectconversion efficiency (η)en_US
dc.titleCurrent-voltage characteristics of p-CuO/n-ZnO:Sn Solar cellen_US
dc.typeArticleen_US
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