Structural Transformations in Thin Ge 2 Sb 2 Te 5 Films

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dc.contributor.authorNjoroge, W. K.
dc.contributor.authorWuttig, M.
dc.contributor.authorWeidenhof, V.
dc.contributor.authorFranz, P.
dc.date.accessioned2014-06-03T09:26:20Z
dc.date.available2014-06-03T09:26:20Z
dc.date.issued2008-06-16
dc.descriptionDOI:10.1134/S0020168509040050en_US
dc.description.abstractTemperature dependent measurements of the electrical resistance have been employed to study structural changes in sputteredGe2Sb2Te5films. The pronounced changes of filmresistance due to structural changes enable a precise determination of transition temperatures and activation energies. Furthermore the technique is sensitive enough to measure the influence of ultrathin capping layers on the transformation kinetics. With increasing temperature the Ge2Sb2Te5films undergo a structural change from an amorphous to rock salt structure(Fm3m) around 140 °C and finally a hexagonal structure(p3̄m) around 310 °C. Both structural changes are accompanied by a major drop of resistance. Applying the Kissinger method [Anal. Chem. 29, 1702 (1957)] the activation energy for crystallization to the rock salt structure is determined to be 2.24±0.11 eV, and for the phase transformation to the hexagonal phase to be 3.64±0.19 eV, respectively. A thin capping layer of ZnS–SiO2 leads to an increase of the first transition temperature as well as of the corresponding activation energy(2.7±0.2 eV).en_US
dc.identifier.citationJournal of Applied Physics 87, 4130en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/9752
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.titleStructural Transformations in Thin Ge 2 Sb 2 Te 5 Filmsen_US
dc.typeArticleen_US
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