• English
    • français
  • français 
    • English
    • français
  • Ouvrir une session
Voir le document 
  •   Accueil de DSpace
  • Research Papers (RP)
  • RP-School of Pure and Applied Sciences
  • RP-Department of Physics
  • Voir le document
  •   Accueil de DSpace
  • Research Papers (RP)
  • RP-School of Pure and Applied Sciences
  • RP-Department of Physics
  • Voir le document
JavaScript is disabled for your browser. Some features of this site may not work without it.

Charge Transport Mechanism in Thin Cuticles Holding Nandi Flame Seeds

Thumbnail
Voir/Ouvrir
Full article (3.603Mo)
Date
2009
Auteur
Rathore, I. V. S.
Kipnusu, Wycliffe K
Katana, Gabriel
Migwi, C. M.
Sangoro, Joshua R
Metadata
Afficher la notice complète
Résumé
Metal-sample-metal sandwich configuration has been used to investigate DC conductivity in 4 mum thick Nandi flame [Spathodea campanulata P. Beauv.] seed cuticles. J-V characteristics showed ohmic conduction at low fields and space charge limited current at high fields. Charge mobility in ohmic region was 4.06 x 10(-5) (m(2)V(-1)s(-1)). Temperature-dependent conductivity measurements have been carried out in the temperature range 320 K < T > 450 K. Activation energy within a temperature of 320 K-440 K was about 0.86 eV. Variable range hopping (VRH) is the main current transport mechanism at the range of 330-440 K. The VRH mechanism was analyzed based on Mott theory and the Mott parameters: density of localized states near the Fermi-level N(E(F)) approximately 9.04 x 10(19) (eV(-1)cm(-3)) and hopping distance R approximately 1.44 x 10(-7) cm, while the hopping energy (W) was in the range of 0.72 eV-0.98 eV.
URI
http://ir-library.ku.ac.ke/handle/123456789/7539
Collections
  • RP-Department of Physics [100]

Designed by Library ICT Team copyright © 2017 
Contactez-nous | Faire parvenir un commentaire

 

 

Parcourir

Tout DSpaceCommunautés & CollectionsPar date de publicationAuteursTitresSujetsCette collectionPar date de publicationAuteursTitresSujets

Mon compte

Ouvrir une sessionS'inscrire

Designed by Library ICT Team copyright © 2017 
Contactez-nous | Faire parvenir un commentaire