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dc.contributor.authorMosiori, Cliff Orori
dc.contributor.authorMaera, John
dc.contributor.authorShikambe, Reuben
dc.contributor.authorMagare, Robert
dc.date.accessioned2017-12-29T11:47:52Z
dc.date.available2017-12-29T11:47:52Z
dc.date.issued2017
dc.identifier.citationTraektoriâ Nauki = Path of Science. 2017. Vol. 3, No 6en_US
dc.identifier.issn2413-9009
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/18046
dc.descriptionResearch Articleen_US
dc.description.abstractIn developing countries like Kenya, solution processing technique is the cheapest and simplest technique to grow inorganic composites thin films. This method was used to grow thin films of Cd0.3Zn1.1xS0.7 on ordinary microscope Perspex substrate slides from aqueous solutions of Zinc chloride and cadmium chloride in ammonia solution. A solution of triethanalomine was used as a complexing agent while thiourea was used as source of sulphide ions. Electrical properties as a function of their thicknesses were obtained by varying deposition time while all other parameters were maintained constant. Using a resistance measurement device and a Gauss meter, resistivity and the conductivity of the films were found to be thickness dependent with semiconductor nature.en_US
dc.language.isoenen_US
dc.publisherPublishing Center Dialogen_US
dc.subjectComplexing agenten_US
dc.subjectZincen_US
dc.subjectCadmiumen_US
dc.subjectThioureaen_US
dc.subjectResistivityen_US
dc.subjectSulphuren_US
dc.titleElectrical Behavior of Cd0.3Zn1.1x S0.7 Thin Films for Non-Heat Light Emitting Diodesen_US
dc.typeArticleen_US


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