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dc.contributor.authorMakori, N. E.
dc.contributor.authorAmatalo, I. A.
dc.contributor.authorKarimi, P. M.
dc.contributor.authorNjoroge, W. K.
dc.date.accessioned2016-02-16T08:48:18Z
dc.date.available2016-02-16T08:48:18Z
dc.date.issued2014
dc.identifier.citationAmerican Journal of Condensed Matter Physics 2014, Vol.4,5: 87-90 DOI: 10.5923/j.ajcmp.20140405.01en_US
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/14186
dc.descriptionDOI: 10.5923/j.ajcmp.20140405.01en_US
dc.description.abstractTin Selenide (SnSe) thin films were optimised for thin film solar cell applications. The thin films were successfully deposited by thermal evaporation using Edward’s Auto 306 Magnetron Sputtering System. Their optical and electrical properties were studied using Solid Spec-3700 DUV Spectrophotometer and Four Point Probe method respectively. The deposited SnSe thin films had transmittance ranging between 1 - 45%. SCOUT 98 Software was used to obtain optical band gap values and absorption coefficients of SnSe thin films. Optical band gap values obtained were in the range of 1.71-1.76eV. The thin films showed decrease of resistivity from 181-120Ωcm with increase in film thickness from 112-148 nm. Low transmittance of SnSe implies high absorption coefficient which is one of the important parameter to be considered when choosing absorber layers for thin film solar cell applications.en_US
dc.language.isoenen_US
dc.publisherInstitute for Condensed Matter Physicsen_US
dc.subjectThermal evaporationen_US
dc.subjectThin film thicknessen_US
dc.subjectOptical propertiesen_US
dc.subjectElectrical propertiesen_US
dc.titleOptical and electrical properties of Snse thin films for solar cell applications.en_US
dc.typeArticleen_US


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