Electrical behaviour of Zinc Sulphide (ZnS)thin films grown by chemical bath deposited
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Date
2014-12
Authors
Mosiori, Cliff Orori
Njoroge, Walter K.
Okum, John
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Abstract
At room temperature, thin films of Zinc Sulphide were grown on microscope glass slides.
Precursor solution from aqueous solutions of Zinc chloride in which ammonia solution as
a source of Zn 2+ ; Triethanalomine (TEA) as a complexing agent, and thiourea (TU) as a
source S 2-
were used. Electrical properties were investigated in relation to their
thicknesses as measured as it varied by changing the deposition time. Resistivity and the
conductivity of the films were found to be thickness dependent while the results indicate
that the films are semiconducting in nature.
Keywords: Chemical Bath Method, ZnS, Zinc Sulphide, Resistivity,
Conductivity, Binary Thin Films
Description
Research article
Keywords
Chemical Bath Method, ZnS, Zinc Sulphide, Resistivity, Conductivity, Binary Thin Films
Citation
Rift Valley Journal of Science and Technology, http://www.rvist.ac.ke Vol. 1 No 3, December, 2014