Munji, M. K.Nyaga, P. K.Musembi, R. J.2014-10-212014-10-2120141st Young Scientists' MSSEESA Conference on Materials Science and Solar Cell Technology Abstract No 10http://ir-library.ku.ac.ke/handle/123456789/11505Layers of transparent and conductive Sn-doped Zinc oxide (lnO) have been prepared by reacti. e evaporation on glass substrates. The deposition has been done at various doping levels ranging from J % to 8%. Annealing of samples was done using Rapid Thermal Processing (RTP). In this work, Nabertherrn Programmable Furnace system was used and annealing done at 300°C for one hour. Electrical characterization has been done for both prepared and annealed samples using four point probe configuration at room temperature (25°C) to obtain the sheet resistance. The sheet resistance for tin doped zinc oxide reduced with increase in tin doping to a minimum of J J .920cm at 4% tin doping for as prepared samples and I I .890cl11 for annealed samples.enArticle