Show simple item record

dc.contributor.authorMin, Ho Soon
dc.contributor.authorOeba, Duke
dc.contributor.authorMakori, Evans
dc.contributor.authorMunji, Mathew
dc.contributor.authorNjoroge, Walter
dc.date.accessioned2021-10-18T09:47:52Z
dc.date.available2021-10-18T09:47:52Z
dc.date.issued2021
dc.identifier.citationSoon Min, Ho; Oeba, Duke; Makori, Evans; Munji, Mathew; and Njoroge, Walter (2022) "Opto-Electrical Properties of Chemical bath Deposited Cu4SnS4 Thin Films," International Journal of Thin Film Science and Technology: Vol. 11 : Iss. 1 , Article 2. Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol11/iss1/2en_US
dc.identifier.issn2090-9519 (PRINT)
dc.identifier.issnISSN 2090-9527 (ONLINE)
dc.identifier.urihttps://digitalcommons.aaru.edu.jo/ijtfst/vol11/iss1/2/
dc.identifier.urihttps://digitalcommons.aaru.edu.jo/cgi/viewcontent.cgi?article=1239&context=ijtfst
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/22792
dc.descriptionA research article published in International Journal of Thin Film Science and Technologyen_US
dc.description.abstract: Thin films could be explained as a very thin layer of a substance deposited onto various substrates. Nowadays, a variety of binary, ternary, quaternary and pent nary films have been produced by using different deposition techniques. A comprehensive study of the effects of deposition temperature on the optical and electrical properties of chemical bath deposited copper tin sulphide (Cu4SnS4) thin films is reported. The Cu4SnS4 thin films were prepared, characterized, and optimized for solar light trapping. Optical properties of the films namely, reflectance and transmittance were measured using UV-VIS NIR 3700 spectrophotometer. Transmittance and band gap of the optimized Cu4SnS4 thin films were found to be below 25 % and 1.46 eV respectively (films deposited at 70 o C). Further, these films showed a peak average absorbance of 62.95 %. The films were characterized using a four-point probe to determine their surface sheet resistivity. The resistivity decreases from 19.28 Ω-cm to 8.38 Ω-cm with an increase in the deposition temperature (40°C to 70°C). The obtained optical and electrical results showed the optimum deposition temperature (70°C) for the formation of Cu4SnS4 thin films, could be used as an absorber layer for solar cell applications. The optimized Cu4SnS4 films had the lowest transmittance and reflectance, highest absorbance, minimum band gap, and lowest resistivity, all positive qualities of potential material for use as an absorber layer for photovoltaic applications.en_US
dc.language.isoenen_US
dc.publisherInternational Journal of Thin Film Science and Technologyen_US
dc.subjectThin filmen_US
dc.subjectElectrical behavioursen_US
dc.subjectChemical bath depositionen_US
dc.subjectCu4SnS4 filmsen_US
dc.subjectSolar cellen_US
dc.subjectSemiconductoren_US
dc.titleOpto-Electrical Properties of Chemical Bath Deposited Cu4SnS4 Thin Filmsen_US
dc.typeArticleen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record