Effect of Substrate Temperature on the Optical Properties of SnxSey/ZnO:Al P-N Junction Solar Cell

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Date
2017Author
Gitonga, John
Munji, Mathew
Musembi, Robinson
Mugambi, Nelson
Gitonga, Geoffrey
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Zinc Oxide was doped with various percentages of Aluminum ranging from 0% to 10% by mass. Tin (Sn) and
selenium (Se) metal samples were mixed in different ratios of increasing selenium. Deposition of both SnSe and ZnO:Al thin
films on glass substrate was done by a method of evaporation using Edwards Auto 306 RF/DC Magnetron evaporation
system under the following conditions; deposition temperature 500K, pressure of 3.5×10-5 millibars and a current of 3.5A.
Transmittance and reflectance data in the range 300nm-1500nm was obtained using a double beam solid spec 3700
UV-VIS-NIR shimadzu spectrophotometer. Doping of 5% aluminium and a synthesized ratio of 1:1.0 for ZnO:Al and SnSe
thin films respectively was obtained as the optimum values. The optimized Al doped ZnO was deposited at different
deposition temperature ranging from 350K-550K. Transmittance percentage in the visible region was used to optimize
deposition temperature and 510K was obtained as the optimum value. Band gap energies of optimized ZnO:Al and SnxSey
was found to be 3.61±0.05 eV and 1.37±0.05 eV respectively.
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- RP-Department of Physics [112]