Now showing items 1-4 of 4
Mechanical stresses upon crystallization in phase change materials
(American Institute of Physics, 2001)
Crystallization processes in different Te alloys, employed in phase change materials for optical data storage, have been investigated by in situ mechanical stress measurements. Upon crystallization a considerable stress ...
Density changes upon crystallization of Ge2Sb2.04Te4.74 films
The density of sputtered Ge2Sb2.04Te4.74 thin films upon annealing has been precisely determined by x-ray reflection and compared to the values determined from x-ray diffraction (XRD) data. The film density increases in ...
Influence of dielectric capping layers on the crystallization kinetics of Ag5In6Sb59Te30 films
(American Institute of Physics, 2004)
AgInSbTe alloys are attractive storage materials for phase change recording utilizing both optical and electronic contrast. The demand to decrease the thickness of such storage layers increases the significance of the ...
Structural Transformations in Thin Ge 2 Sb 2 Te 5 Films
(American Institute of Physics, 2008-06-16)
Temperature dependent measurements of the electrical resistance have been employed to study structural changes in sputteredGe2Sb2Te5films. The pronounced changes of filmresistance due to structural changes enable a precise ...