Crystallization processes in different Te alloys, employed in phase change materials for optical data storage, have been investigated by in situ mechanical stress measurements. Upon crystallization a considerable stress ...

The density of sputtered Ge2Sb2.04Te4.74 thin films upon annealing has been precisely determined by x-ray reflection and compared to the values determined from x-ray diffraction (XRD) data. The film density increases in ...

AgInSbTe alloys are attractive storage materials for phase change recording utilizing both optical and electronic contrast. The demand to decrease the thickness of such storage layers increases the significance of the ...

Temperature dependent measurements of the electrical resistance have been employed to study structural changes in sputteredGe2Sb2Te5films. The pronounced changes of filmresistance due to structural changes enable a precise ...