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Mechanical stresses upon crystallization in phase change materials
(American Institute of Physics, 2001)
Crystallization processes in different Te alloys, employed in phase change materials for optical data storage, have been investigated by in situ mechanical stress measurements. Upon crystallization a considerable stress ...
In situ measurements of thickness changes and mechanical stress upon gasochromic switching of thin MoOx films
(American Institute of Physics (AIP), 2004)
Thin films of MoOx coated with platinum as a catalyst were prepared by dc magnetron sputtering from a molybdenum target in an oxygen and argon atmosphere. The films were colored and bleached by exposure to diluted hydrogen ...
Density changes upon crystallization of Ge2Sb2.04Te4.74 films
(2002-05)
The density of sputtered Ge2Sb2.04Te4.74 thin films upon annealing has been precisely determined by x-ray reflection and compared to the values determined from x-ray diffraction (XRD) data. The film density increases in ...
The role of backscattered energetic atoms in film growth in reactive magnetron sputtering of chromium nitride
(IOP Publishing, 2007-02-07)
In this work the impact of backscattered energetic atoms on film growth in reactive sputtering of CrNx (x _ 1) is manifested. We use film and plasma characterization techniques, as well as simulations in order to study the ...
Gasochromic Switching of Reactively Sputtered Molybdenumoxide Films: A Correlation between Film Properties and Deposition Pressure.
(Elsevier B.V., 2006)
Molybdenumoxide (MoOx) thin films can change their optical properties upon exposure to hydrogen. Since the film properties strongly depend on process parameters we have studied how the films are affected by the total ...
Influence of dielectric capping layers on the crystallization kinetics of Ag5In6Sb59Te30 films
(American Institute of Physics, 2004)
AgInSbTe alloys are attractive storage materials for phase change recording utilizing both optical and electronic contrast. The demand to decrease the thickness of such storage layers increases the significance of the ...
Structural Transformations in Thin Ge 2 Sb 2 Te 5 Films
(American Institute of Physics, 2008-06-16)
Temperature dependent measurements of the electrical resistance have been employed to study structural changes in sputteredGe2Sb2Te5films. The pronounced changes of filmresistance due to structural changes enable a precise ...