Thin films of MoOx coated with platinum as a catalyst were prepared by dc magnetron sputtering from a molybdenum target in an oxygen and argon atmosphere. The films were colored and bleached by exposure to diluted hydrogen ...

Transparent conducting ZnO:Al thin films were prepared by reactive evaporation method in the Physics laboratory using An Edward Auto 306 RF/DC Magnetron deposition chamber. This was done at a temperature of 500K, current ...

We have obtained differential and integral cross sections for the excitation of caesium atom to the lowest autoionizing level by positron impact using the distorted wave approximation. We have also done calculations for ...

Lead sulphide [PbS] thin films were deposited on glass slide substrates using the chemical bath deposition [CBD] technique at room temperature for 120 minutes. Optical properties of the thin films were measured by ...

Molybdenumoxide (MoOx) thin films can change their optical properties upon exposure to hydrogen. Since the film properties strongly depend on process parameters we have studied how the films are affected by the total ...

The accuracy and reliability of any theoretical scattering model relies on the wave functions used and the energy of the projectile. Perturbation methods are known to be accurate at intermediate and high energies of the ...

Tungsten oxide thin films are the most investigated because of their possible application in electrochromic devices. Studies have shown that the film properties depend on deposition conditions and preparation techniques. ...

Differential and total cross sections for 11S-23S and 11S-23P excitation of helium atom has been calculated using distorted wave method. The distortion potential is taken as the static potential of the helium atom in the ...

The electrical characteristics of semiconductor thin films are of great practical interest in microelectronics industry hence the need to measure these parameters in a cheaper and faster manner possible. In this study, ...

We have used the random phase model for the electronic wave functions to calculate the imaginary part of the dielectric function 82 (m) and the magnitude of the third harmonic generation, 11'3(OJ ~ using a model structure ...