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Mechanical stresses upon crystallization in phase change materials 

Njoroge, W. K.; Kalb, J.; Wamwangi, D.; Wuttig, M.; Spaepen, F. (American Institute of Physics, 2001)
Crystallization processes in different Te alloys, employed in phase change materials for optical data storage, have been investigated by in situ mechanical stress measurements. Upon crystallization a considerable stress ...
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Optical and electrical characterization of ZnS:Sn thin films for solar cell application 

Wanjala, K. S.; Njoroge, W. K.; Ngaruiya, J. M. (2016)
Tin Doped Zinc Sulphide (ZnS:Sn) thin films are a special kind of material that exhibit electrical conductivity and at the same time, high transmittance in visible region making it suitable for Solar Cell applications. ...
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ZnO:Sn deposition by reactive evaporation: Effects of Sn doping on the electrical and optical properties. 

Njoroge, W. K.; Munguti, Lawrence Kioko; Musembi, R. J. (2014-08-26)
Tin doped zinc oxide thin films were deposited by reactive evaporation under various tin doping levels ranging from 1% to 8%. The deposition was done using Edwards Auto 306 coating unit at room temperature (25°C) and 5.0 ...
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Phase change memory based on SnSe4 alloy 

Karanja, J. M.; Karimi, P. M.; Njoroge, W. K.; Wamwangi, D. M. (Thin Solid Films, 2013-01-01)
A phase change alloy has been synthesized and characterized. The reversible phase transitions between amorphous and crystalline states of SnSe4 films have been studied using variable electrical pulses and X-ray diffraction. ...
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Optical and Electrical Properties of Zinc Oxide Doped with Aluminium (ZnO:Al) thin Films Prepared by Reactive Evaporation Method 

Njoroge, W. K.; Mugah, Charles Onyango; Okumu, J. (2012-11)
Transparent conducting ZnO:Al thin films were prepared by reactive evaporation method in the Physics laboratory using An Edward Auto 306 RF/DC Magnetron deposition chamber. This was done at a temperature of 500K, current ...
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Density changes upon crystallization of Ge2Sb2.04Te4.74 films 

Njoroge, W. K.; Wöltgens, H. W.; Wuttig, M. (2002-05)
The density of sputtered Ge2Sb2.04Te4.74 thin films upon annealing has been precisely determined by x-ray reflection and compared to the values determined from x-ray diffraction (XRD) data. The film density increases in ...
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Characterization of SnSe-CdO: Sn PN Junction for Solar Cell Applications 

Makori, N. E.; Njoroge, W. K.; Amatalo, A.; Karimi, P. M. (Scientific and Academic Printing (SAP), 2015)
Solar energy has a great potential of meeting a large fraction of energy needs using photovoltaics. While most photovoltaic cells in use today are Silicon-based, cells of other semiconductor materials have been manufactured. ...
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Current-voltage characteristics of p-CuO/n-ZnO:Sn Solar cell 

Njoroge, W. K.; Omayio, Enock Osoro; Karimi, P. M.; Mugwanga, F. K. (Natural Sciences Publishing Cor., 2013)
A p-CuO/n-ZnO:Sn heterojunction solar cell has been fabricated on glass substrate in steps using Edwards AUTO 306 vacuum coater system. Copper oxide has energy band gap of the range 1.21-2.1 eV while tin doped zinc oxide ...
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Current-voltage characteristics of p-CuO/n-ZnO:Sn Solar cell 

Omayio, E. O.; Karimi, P. M.; Njoroge, W. K.; Mugwanga, F. K. (Natural sciences publishing corporation, 2013)
Abstract: A p-CuO/n-ZnO:Sn heterojunction solar cell has been fabricated on glass substrate in steps using Edwards AUTO 306 vacuum coater system. Copper oxide has energy band gap of the range 1.21-2.1 eV while tin doped ...
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Optical and electrical properties of Snse thin films for solar cell applications. 

Makori, N. E.; Amatalo, I. A.; Karimi, P. M.; Njoroge, W. K. (Institute for Condensed Matter Physics, 2014)
Tin Selenide (SnSe) thin films were optimised for thin film solar cell applications. The thin films were successfully deposited by thermal evaporation using Edward’s Auto 306 Magnetron Sputtering System. Their optical and ...
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Njoroge, W. K. (14)
Karimi, P. M. (6)Wuttig, M. (4)Makori, N. E. (3)Amatalo, I. A. (2)Mugwanga, F. K. (2)Amatalo, A. (1)Dieker, H (1)Franz, P. (1)Kalb, J. (1)... View MoreSubjectOptical properties (5)Electrical properties (3)Thermal evaporation (3)conversion efficiency (η) (2)copper indium gallium selenide (CIGS) (2)Fill factor (FF) (2)open circuit voltage (Voc) (2)short circuit current (Isc) (2)Thin film thickness (2)Tin doping (2)... View MoreDate Issued2010 - 2016 (10)2001 - 2009 (4)

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