Ohmic and Space-Charge-Limited Conduction in Doped Amorphous Arsenic Triselenide

Abstract

The electrical characteristics of asernic triselenide have been studied. A number of parameters is evaluated on the basis of the theory of space-charge limited conduction and the following values were obtained: hole mobility Il == 2.68 x 1O-l3m2v-'s-1,room temperature hole concentration Po == 7.21xl023m-3, temperature parameter of trapping distribution T, == 790K; total trap concentration Nt == 3.49 x 1025m-3.Both deep and shallow traps were present. The latter extended to a depth of 0.27 ± 0.03 eV while the deep traps were at about the fermi level.