Optoelectronic Properties of Palladium Doped Tin (IV) Oxide (Pd: Sn02) Tlfin Films Deposited by Spray Pyrolysis
Munji, M. K.
Mwathe, P. M.
Musembi, R. J.
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Palladium Doped Tin (lV) Oxide (Pd: Sn02) thin films were deposited by Spray Pyrolysis technique using an alcoholic precursor solution consisting of Stannic chloride (SnCl~.5H20) and Palladium Chloride (PdCI?j The effect of increasing palladium concentration 011 optical and electrical properties was investigated. Sheet resistivity of the thin films was measured using the four point probe method and laid in the range of 0027- 3.43 Dcm for Pd: SnO:, thin films with Pd content of 0 - 6931% Pd prepared under optimized conditions. The optical properties were studied ill the UV/V1SiN1R region The Optical Band gap of the thin films was ill the range of3.73 - 4.11 eV