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dc.contributor.authorKipnusu, W. K.
dc.contributor.authorKatana, G.
dc.contributor.authorMigwi, C. M.
dc.contributor.authorRathore, I. V. S.
dc.contributor.authorSangoro, J. R.
dc.date.accessioned2014-01-15T12:41:37Z
dc.date.available2014-01-15T12:41:37Z
dc.date.issued2009
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/8573
dc.descriptiondoi:10.1155/2009/830270en_US
dc.description.abstractCurrent-voltage (I-V) characteristics of Nandi flame seed cuticles (NFSCs) have been studied as a function of irradiation, annealing, and poling temperature. The cuticles showed memory and threshold switching. Threshold voltage Vth was about 5 V which is almost five times higher than Vth observed in synthetic polymers. The threshold voltage Vth increased to 6–8 V after irradiation and annealing depending on the duration of annealing or irradiation. After switching, conductivity increased by an order of 102 . In reverse bias, increase of current was observed and the memory hysteresis loop was at higher conductivity than at the time of switching. Switching effect was minimized at a poling temperature of 370 K. Formation of semiquinones and quinoid radicals from phenolic compounds may have contributed to electrical switching and hysteresis effect.en_US
dc.language.isoenen_US
dc.publisherHindawi Publishing Corporationen_US
dc.titleElectrical Switching in Thin Films of Nandi Flame Seeds Cuticlesen_US
dc.typeArticleen_US


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