Electrons, holes, and the hall effect in amorphous silicon
Holender, J. M.
MetadataShow full item record
The double sign anomaly in hydrogenated amorphous silicon, observed by LeComber et.al.in 1977, has remained puzzling ever since. Recently we attacked this problem from two different directions using the equation-of-motion method. Calculations reproduce the double sign anomaly and were rationalised in terms of the behaviour of the spectral function. In a new type of calculation the motion of a ‘wave packet’ was studied in an applied field. Behaviour characteristics of positive and negative effective masses was found in the same ranges of energy for crystalline and a-Si. A perturbation theory is given for reconciling these results.