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dc.contributor.authorNjoroge, Walter K.
dc.contributor.authorWuttiga, Matthias
dc.date.accessioned2016-06-18T12:49:49Z
dc.date.available2016-06-18T12:49:49Z
dc.date.issued2001-10
dc.identifier.citationJournal of Applied Physics 90, 3816 (2001); doi: 10.1063/1.1405141en_US
dc.identifier.issn00218979
dc.identifier.urihttp://ir-library.ku.ac.ke/handle/123456789/14778
dc.descriptiondoi: 10.1063/1.1405141en_US
dc.description.abstractAgInSbTe films have recently attracted considerable interest as advanced materials for phase change recording. For this application the determination of crystallization kinetics is of crucial importance. In this work the temperature dependence of structural and electrical properties of sputtered AgInSbTe films has been determined. Temperature dependent measurements of the electrical resistance have been employed to study the kinetics of structural changes of these films. Upon annealing a major resistivity drop is observed at around 160 °C which can be attributed to a structural change as corroborated by x-ray diffraction. X-ray diffraction shows an amorphous phase for as-deposited films, while crystalline films with hexagonal structure (a54283 Å, c516 995 Å! are obtained upon annealing above 160 °C. By applying Kissinger’s method, an activation energy of 3.0360.17 eV is obtained for the crystallization. X-ray reflection measurements reveal a density increase of 5.2%60.2% and a thickness decrease of 5.5%60.2% upon crystallization. © 2001 American Institute of Physics. @DOI: 10.1063/1.1405141#en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.titleCrystallization kinetics of sputter-deposited amorphous AgInSbTe filmsen_US
dc.typeArticleen_US


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